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  1. Quasiparticle spectroscopy in tantalum films with different Ta/sapphire interfaces

    One of the crucial aspects of current research in quantum information science is the identification and control of loss mechanisms in superconducting (SC) circuits. Although microwave measurements directly quantify device performance, additional techniques that probe quasiparticle excitations in SC films are needed to understand the microscopic mechanisms underlying dissipation and decoherence. Here, we present results from quasiparticle spectroscopy of Ta/sapphire films by measuring the Meissner-state magnetic susceptibility using a precision frequency-domain resonator specifically designed for thin films. We find direct evidence for additional low-energy excitations in samples with lower internal quality factors. These excitations are consistent with deep subgap statesmore » due to two-level systems, Yu–Shiba–Rusinov states near the gap edge, and perhaps other pair-breaking mechanisms. The developed non-destructive frequency-domain quasiparticle spectroscopy is a valuable addition to the quantum materials toolbox.« less
  2. Temperature-driven reaction pathways in alkane direct dehydrogenation over metal-free nitrogen doped carbocatalysts

    Metal-free heteroatom-doped carbocatalysts are promising alternatives to precious metals for alkane direct dehydrogenation/hydrogenation and reversible hydrogen storage, yet the nature of their active sites remains poorly understood. This study investigates a nitrogen assembly carbocatalyst (NAC) for efficient and selective hydrocarbon dehydrogenation. For ethylbenzene, NAC maintains a selectivity of >99% towards styrene at a conversion of >20% for 120 hours at a weight hourly space velocity of 0.4 h−1. Theoretical studies suggest that closely spaced graphitic nitrogen sites are the active sites for the chemisorption and dehydrogenation of ethylbenzene, and the robustness of these sites is supported by ambient-pressure X-ray photoelectronmore » spectroscopy. Kinetic analysis reveals a temperature-dependent reaction profile, with distinct activation energies and reaction orders at 300 and 500 °C. Isotope-labeling studies indicate that dehydrogenation primarily proceeds via initial cleavage of the benzylic C–H bond, and the faster desorption of ethylbenzene at higher temperatures contributes to the difference in kinetic behavior. Importantly, the NAC catalyst also enables efficient hydrogenation of styrene back to ethylbenzene at 250 °C, allowing for reversible hydrogen storage using a single catalyst at moderate temperatures. These findings underscore the significance of constructing high densities of closely spaced graphitic nitrogen in carbocatalysts for enhanced activity and selectivity.« less
  3. Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

    Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onsetmore » of epitaxial growth of α -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.« less
  4. Terahertz near-field imaging of sidewall-induced losses in superconducting qubits

    Correlating superconducting qubit performance with advanced materials analysis is a key strategy for improving coherence. Existing diagnostics for key properties, such as dielectric loss, structural discontinuity, and interface heterogeneity, often rely on destructive electron microscopy or low-throughput millikelvin measurements. Here, in this study, we demonstrate noninvasive terahertz (THz) nano-imaging/spectroscopy of encapsulated niobium transmon qubits as a high-throughput proxy for performance evaluation. We identify large variations in sidewall near-field signals, implicating sidewall loss and discontinuity as major coherence limiters, and also use THz hyperspectral line scans to probe dielectric responses and field participation at Al junction interfaces.
  5. Decoupling size and surface effects of intermetallic CuPd nanocrystals for electrocatalytic nitrate reduction to ammonia

    Nitrate pollution poses a major environmental challenge, but its electrochemical conversion to ammonia offers a sustainable waste-to-value solution. Here, in this study, we synthesized monodisperse, size-tunable B2-phase CuPd intermetallic nanocrystals (6–46 nm) and studied their performance in the electrochemical nitrate reduction reaction (eNO3RR). By using bromide ions to modulate Pd reduction and applying mild annealing, we achieved phase-pure B2 structures across all sizes. Catalytic testing revealed a volcano-like trend in ammonia yield, peaking at 33 nm nanocubes with a rate of 6.97 mol h−1 g−1 at −0.6 V vs. reversible hydrogen electrode (RHE). This optimum reflects a balance between themore » increased surface area of smaller particles and the enhanced exposure of active (100) facets in larger ones. Theoretical calculations indicated that the B2-CuPd (100) facet is favorable for nitrate adsorption, thereby supporting the high activity of nanocubes. Our results highlight the critical role of tuning both nanoparticle size and surface structure to maximize eNO3RR efficiency.« less
  6. Well-defined Pt(0) heterogeneous hydrosilylation catalysts supported by a surface bound phosphenium

    Single atom, low valent transition metals are important for heterogeneous catalysis but are challenging to generate and stabilize in a well-defined manner. Herein, we explored the functionalization of silica with well-defined N-heterocyclic phosphenium (NHP) ions to heterogenize low-valent metals. The surface electro-statically bound [NHP]+ coordinate to Pt(0) precursors resulting in well-defined, chemisorbed [(NHP)Pt(0)Ln]+ sites. The resulting materials catalyze the hydrosilylation of alkynes and exhibit activities and selectivities that rival the current industry standard homogeneous catalysts. The catalysts leach Pt limiting their recyclability; however, recycling studies support that the high regioselectivities arise from heterogeneous sites and Pt particles do not formmore » on the surface. Here we suspect that this phosphenium-based immobilization strategy will result in stable, tunable, low valent heterogeneous transition metal catalysts in a wider array of catalytic reactions.« less
  7. Topological Defect Mediated Helical Phase Reorientation by Uniaxial Stress

    Strain engineering enables precise, energy-efficient control of nanoscale magnetism. However, unlike well-studied strain-dislocation interactions in mechanical deformation, the spatial evolution of strain-induced spin rearrangement remains poorly understood. Using in situ Lorentz transmission electron microscopy, we manipulate and observe helical domain reorientation under quantitatively applied uniaxial tensile stress. Our findings reveal striking similarity to plastic deformation in metals, where the critical stress for propagation vector (Q) reorientation depends on its angle with the stress direction. Magnetic defects mediate reorientation via “break-and-reconnect” or “dislocation gliding–annihilation” processes. Simulations confirm that strain-induced anisotropic Dzyaloshinskii-Moriya interaction may play a key role. These insights advance strain-drivenmore » magnetism and offer a promising route for energy-efficient magnetic nanophase control in next-generation information technology.« less
  8. Oscillating Grain Boundaries and Their Effects on Grain Growth: Observations in Skyrmion Bicrystals

    Grain boundary migration is usually considered to occur through the consistent motion of grain boundaries toward their centers of curvature, ultimately leading to grain growth. However, we show that in 2D skyrmion bicrystals comprising individual grains of hexagonal symmetry, grain boundaries can undergo large amplitude oscillations while maintaining their basic geometric features. Wave-like boundary motion, triggered by individual and collective motion of particles at the grain boundaries, is a behavior that is not accounted for in traditional models of grain boundary migration. Our findings highlight the need for further investigation into the dynamics of grain boundaries during grain growth.
  9. Giant Uniaxial Magnetocrystalline Anisotropy in SmCrGe3

    Magnetic anisotropy is a crucial characteristic for enhancing the spintronic device performance. The synthesis of SmCrGe3 single crystals through a high-temperature solution method has led to the determination of uniaxial magnetocrystalline anisotropy. Phase verification was achieved by using scanning transmission electron microscopy (STEM), powder, and single-crystal X-ray diffraction techniques. Electrical transport and specific heat measurements indicate a Curie temperature (TC) of approximately 160 K, while magnetization measurements were utilized to determine the anisotropy fields and constants. Curie–Weiss fitting applied to magnetization data suggests the contribution of both Sm and Cr in the paramagnetic phase. Additionally, density functional theory (DFT) calculationsmore » explored the electronic structures and magnetic properties of SmCrGe3, revealing a significant easy-axis single-ion Sm magnetocrystalline anisotropy of 16 meV/fu. Based on the magnetization measurements, easy-axis magnetocrystalline anisotropy at 20 K is 13 meV/fu.« less
  10. Exploring the relationship between deposition method, microstructure, and performance of Nb/Si-based superconducting coplanar waveguide resonators

    Superconducting quantum circuits (SQC) are one of the most promising hardware platforms for quantum computing, yet their performance is currently limited by the presence of various structural defects inside the circuit's structure. Despite impressive progress in the past decade, a precise understanding of the origin of these defects from various fabrication processes and their impact on coherence is still lacking. Here, in this study, we performed a comprehensive investigation on the microstructure, superconductivity, and resonator quality factor of Nb films deposited by high-power impulse magnetron sputtering (HiPIMS) and direct current (DC) magnetron sputtering. A suite of characterization techniques, including electronmore » microscopy with spectroscopy, secondary ion mass spectrometry, magneto-optical microscopy, and pump-probe reflectivity spectroscopy is used. We reveal that niobium (Nb) resonators fabricated using HiPIMS exhibit a smaller average grain size, thicker surface oxide with larger thickness variations (rougher surface), and a thicker amorphous Nb/Si interface layer compared to samples deposited by DC sputtering. We identified that the amorphous Nb oxides (mainly located at the Nb surface and along the grain boundaries) and Nb-Si amorphous layers (at the Nb/Si interface) are major and potential sources of two-level system (TLS), while off-stochiometric oxides and suboxides of Nb close to the surface, crystalline defects (i.e., dislocations at grain boundary, point defects introduced during deposition) are main contributors of non-TLS sources. Our findings clarify the relationship between different defects and coherence loss mechanisms, highlighting the importance of material microstructure control on performance optimization in SQC.« less
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"Zhou, Lin"

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